SMBT3906...MMBT3906
PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
• Complementary types:
SMBT3904...MMBT3904 (NPN)
• SMBT3906S/ U: for orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
SMBT3906/ MMBT3906
s2A
1=B
SMBT3906S
s2A
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
SMBT3906U
s2A
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
2=E
3=C
-
-
Package
-
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
40
Collector-base voltage
VCBO
40
Emitter-base voltage
VEBO
6
Collector current
IC
Total power dissipation-
Ptot
Value
200
330
TS ≤ 115°C, SOT363, MMBT3906S
250
TS ≤ 107°C, SC74, MMBT3906U
330
Tj
Storage temperature
Tstg
1
V
mA
mW
TS ≤ 71°C, SOT23, MMBT3906
Junction temperature
Unit
150
°C
-65 ... 150
2012-08-21
SMBT3906...MMBT3906
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
SMBT3906/ MMBT3906
≤ 240
SMBT3906S
≤ 140
SMBT3906U
≤ 130
Unit
mW
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 40
Unit
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
40
-
-
V(BR)EBO
6
-
-
ICBO
-
-
50
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
nA
VCB = 30 V, IE = 0
DC current gain1)
-
hFE
IC = 100 µA, VCE = 1 V
60
-
-
IC = 1 mA, VCE = 1 V
80
-
-
IC = 10 mA, VCE = 1 V
100
-
300
IC = 50 mA, VCE = 1 V
60
-
-
IC = 100 mA, VCE = 1 V
30
-
-
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 1 mA
-
-
0.25
IC = 50 mA, IB = 5 mA
-
-
0.4
IC = 10 mA, IB = 1 mA
0.65
-
0.85
IC = 50 mA, IB = 5 mA
-
-
0.95
Base emitter saturation voltage1)
1Pulse
VBEsat
test: t < 300µs; D < 2%
2
2012-08-21
SMBT3906...MMBT3906
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
250
-
-
Ccb
-
-
3.5
Ceb
-
-
10
td
-
-
35
tr
-
-
35
tstg
-
-
225
tf
-
-
75
F
-
-
4
AC Characteristics
Transition frequency
fT
MHz
IC = 10 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
pF
VCB = 5 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Delay time
ns
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
Storage time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
Fall time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
Noise figure
dB
IC = 100 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
3
2012-08-21
SMBT3906...MMBT3906
Test circuit
Delay and rise time
-3.0 V
275 Ω
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